Ti:Sapphire Laser Crystals

Titanium doped Sapphire (Ti:Sapphire) is the most widely used laser crystal for widely tunable and ultrashort pulsed lasers with high gain and high power outputs. The Ti:Sapphire crystals is grown by the method of Temperature Gradient Technique (TGT), the large-sized (Dia.30x 30mm) Ti:Sapphire crystal in high quality free of light scatter, with the dislocation density less than 102cm-2 could be provided. The TGT grown sapphire crystal is characterized by the (0001) oriented growth, high doping level (a490= 4.0cm-1), high gain and laser damage threshold.

Advantages

1 ) Femtosecond pulse laser material

2 ) Coordinated output wavelength range : 650~1100nm

3 ) High efficiency

Specifications

Material

Ti:Sapphire

Dopant Concentration

0.06 – 0.26at %

Orientation

A-Axis within 5°

Dimension

Diameter:2-30mm, Length:2-30mm(upon customer’s request)

Diameter Tolerance

+/-0.1mm

Length Tolerance

+/-0.1mm

Wavefront Distortion

<λ/8 per [email protected]

Chamfer

<0.2@45°

Wavefront Distortion

λ/8 @632nm

Clear Aperture

>90%

Flatness

λ/8 per [email protected]

Scratch/Dig

10-5 @MIL-0-13830A

Perpendicularity

 ≤15 arc minutes

Parallelism

 <10 arc seconds

Anti-Reflection Coating

R<5.0%@532nm per surface; R<0.5%@650~850nm per surface

Properties

Chemical Formula

Ti3+: Al2O3

Crystal Structure

Hexagonal

Lattice Constants

a=4.758, c=12.991

Density

3.98 g/cm3

Melting Point

2040℃

Mohs Hardness

9

Thermal Conductivity

52 W/m/k

Specific Heat

0.42 J/g/k

Laser Action

4-Level Vibronic

Fluorescence Lifetime

3.2μs (T=300K)

Tuning Range

660 – 1050 nm

Absorbtion Range

400 – 600 nm

Emission Peak

795 nm

Absorption Peak

488 nm

Refractive Index

1.76 @ 800 nm

Peak Cross-Section

3-4×10-19cm2

Thermal Expansion

8.40×10-6/℃