SiC Wafer

OST Photonics offer SiC wafers for semiconductor industry. There are two conduct types of SiC materials for you to choose from: N-type 4H-SiC (Conductivity Type) and high purity semi-insulating (HPSI) 4H-SiC. High purity semi-insulating SiC wafers is mainly used in 5G communication applications. It has the advantages of improving the radio frequency range, ultra-long distance recognition, anti-interference, high-speed and large-capacity information transmission, and is regarded as the most ideal material for making microwave power devices. N-type SiC wafer is mainly used in new energy vehicles, high voltage transmission and transformation stations, white goods, high-speed trains, motors, photovoltaic inverter, pulse power supply and other fields, it has the advantages of reducing equipment energy loss, improving equipment reliability, reducing equipment volume, improving equipment performance and so on, it has irreplaceable advantages in the production of power electronic devices.

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Specifications of N-type 4H-SiC Wafers (Conductivity Type)

N-type 4H-SiC Wafers (Conductivity Type)

Diameter

2”-50 .8 mm

4″- 100.0 mm

6″- 150.0 mm

8”-200.0 mm

Thickness

350μm（DSP）

500μm（DSP）

Surface Orientation

Off-Axis:<0001> 4 ° toward  <11- 20> ± 0 . 5°

Primary Flat Orientation

Parallel to  <1 1 -20 > ±1  °

< 1-100> ± 1 °

Primary Flat Length

16.0 mm

32 . 5 mm

47.5mm

Notch

Secondary Flat Orientation

Silicon face up: 90.0 ˚ CW from Primary ± 5.0˚

N/A

N/A

Secondary Flat Length

N/A

18.0 mm

N/A

N/A

Resistivity

0 . 014 ~ 0 . 028 Ω . cm

Front Surface

Si-Face : CMP , Ra<0 . 2nm

Back Surface

C-Face : optical  polish, Ra<0 . 5nm

Laser Marking

Back side : C-Face

TTV

≤ 10 μm

≤ 15 μm

≤ 15 μm

≤ 20 μm

BOW

≤ 25 μm

≤ 30μm

≤40 μm

≤ 60μm

WARP

≤ 30μm

≤ 40 μm

≤ 60μm

≤ 80μm

Edge Excluding

≤ 3 mm

Specifications of High Purity Semi-insulating (HPSI) 4H-SiC Wafers

High Purity Semi-insulating (HPSI) 4H-SiC Wafers

Diameter

2”- 50 .8mm

3”- 76.2 mm

4”- 100mm

6”-150mm

8”-200mm

Thickness

500μ m   (DSP)

Surface Orientation

<0001> ±  0 . 25 °

Primary Flat Orientation

< 1- 100 > ±1°

Primary Flat Length

16.0 mm

22.0mm

32 .5mm

Notch

Notch

Secondary Flat Orientation

Silicon face up: 90.0 ˚ CW from Primary ± 5.0˚

N/A

N/A

Secondary Flat Length

8mm

11mm

18 mm

N/A

N/A

Resistivity

> 1 E7 Ω .cm

Front Surface

Si- Face:   CMP, Ra<0 . 2nm

Back Surface

C-Face：CMP,Ra<0.2nm

C-Face

polished.

Ra＜5nm

Laser Marking

Back side: C-Face

TTV

≤10 μm

≤15 μm

≤15 μm

≤15 μm

≤20 μm

BOW

≤25 μm

≤25 μm

≤30μm

≤45 μm

≤ 65μm

WARP

≤ 30μm

≤35μm

≤40 μm

≤60μm

≤70 μm

Edge Excluding

≤ 3 mm

Specifications of Special Polytype SiC Wafers

Special Polytype SiC Wafers (6H-N/4H-P/6H-P/3C-N)

Dimensions

10 * 10 mm

2”- 50 .8mm

4”- 100mm

Thickness

350μm(DSP)

Polytype

6H/4H-P/6 H-P/3C-N

Surface Orientation  (6H-N/4H-P/6H-P)

Off Axis: 0 . 0 °-  8 . 0 °toward  < 11 – 20 >   ±  0 . 5°

Surface Orientation (3C-N)

On axis :  <0001 > ± 0 . 5 °

Resistivity (6H-N/4H-P/6H-P)

≤ 0 . 5  Ω  · cm

Resistivity (3C-N)

≤ 1 . 0  mΩ  · cm

Front Surface

Si- Face:   CMP, Ra<0 . 5nm

Back Surface

C-Face:  ptical  polish, Ra< 1 .0 nm

Laser Marking

Back side   :   C- Face

TTV

≤  5 μ m

≤   10 μ m

≤   15 μ m

BOW

≤ 15 μ m

≤  25 μ m

≤  25 μm

WARP

≤ 30μ m

≤  30μ m

≤  40 μ m

Specifications of High Purity Semi-insulating (HPSI) 4H-SiC Ultra-thin Wafers

HPSI 4H-SiC Ultra-thin Wafer

Diameter

2”- 50 .8mm

4”- 100mm

6”- 150mm

Dimensions

50.8*50.8mm/76.2*76.2mm/100*100mm

Thickness

150μ m /200μ m /250μ m /350μ m

Surface Orientation

{0001}  ±  0 . 25 °

Primary Flat Orientation

< 1- 100> ±1°

Primary Flat Length

16.0 mm

32 .5mm

Notch

Secondary Flat Orientation

Silicon face up: 90.0 ˚ CW from Primary ± 5.0˚

N/A

Secondary Flat Length

8mm

18 mm

N/A

Resistivity

> 1 E7 Ω .cm

Surface finish

Polished, Ra≤ 10nm

Ultrathin， Ra<20nm

Laser Marking

Back side: C-Face

TTV

≤15 μm

≤20 μm

≤30μm

Edge Excluding

≤ 3 mm

Properties of SiC Single Crystal

Silicon Carbide Single Crystal

Crystal Structure

Hexagonal Crystal

Band gap (eV)

3 .26 eV

Melting Point (℃)

2730 ℃

Mohs Hardness (mohs)

9.2

Heat Conductivity (W·cm^-1· ℃^-1)

4. 9 W·cm^-1· ℃^-1

Coefficient of Thermal Expansion (℃^-1)

4.7 x 10^-6

Lattice Constant (nm)

a ＝0 .3076 c ＝ 0 .5048

Electronic Mobility (cm^-2.V^-1.s^-1)

720^a 650^c

Disruptive Field (MV· cm^-1)

3.1

JFM Index (power)

410

BFM Index (SW)

290

BHFM Index  (RF)

34

Refractive Index

2.6767 ~ 2.6480