Silicon Wafer (Si Wafer)
OST Photonics offers a wide selection of silicon wafers for semiconductor industry. The wafer diameters are ranging from 2 inch (50.8mm) to 12 inch (300mm), and there are three crystal orientations to choose from: <100>, <111> and <110>, the thickness can also be customized according to your requirements. In addition, SOI wafers, oxide silicon wafers, customized silicon substrates and silicon ingots are also available upon request.
Specifications of Czochralski (CZ) Silicon Wafers
Item | Specifications | ||||||
Diameter | 2″ | 3″ | 4″ | 5″ | 6″ | 8″ | 12″ |
Grade | Prime grade, Test grade, Dummy grade | ||||||
Growth Method | CZ | ||||||
Orientation | <100>,<111>,<110>, etc. | ||||||
Type/Dopant | P-type/Boron, N-type/Phos, N-type/As, N-type/Sb | ||||||
Thickness (um) | 279 | 380 | 525 | 625 | 675 | 725 | 775 |
Thickness Tolerance | Standard ±25um, Maximum Capabilities ±5um | ± 20um | ± 20um | ||||
Resistivity(Ohm-cm) | 0.001-100 | ||||||
Surface Finished | Polished/Etched, Polished/Polished, Etched/Etched, Ground/Ground | ||||||
TTV (um) | Standard < 10um, Maximum Capabilities<5um | ||||||
Bow/Warp (um) | Standard < 40um, Maximum Capabilities<20um | <40um | <40um | ||||
Particle | Upon Request | ||||||
Specifications of Float Zone (FZ) Silicon Wafers
Item | Specifications | |||||
Diameter | 2″ | 3″ | 4″ | 5″ | 6″ | 8″ |
Grade | Prime grade, Test grade, Dummy grade | |||||
Growth Method | FZ | |||||
Orientation | <100>,<111>, etc. | |||||
Type/Dopant | Intrinsic, P-type/Boron, N-type/Phos | |||||
Thickness (um) | 279 | 380 | 525 | 625 | 675 | 725 |
Thickness Tolerance | Standard ±25um | ± 50um | ||||
Resistivity(Ohm-cm) | 1000-30000 and 1-5 | |||||
Surface Finished | Polished/Etched, Polished/Polished, Etched/Etched, Ground/Ground | |||||
TTV (um) | Standard < 10um | |||||
Bow/Warp (um) | Standard < 40um | <50um | ||||
Particle | Upon Request | |||||
Specifications of Oxide Silicon Wafers
Item | Specifications | ||||||||
Diameter | 2″ | 3″ | 4″ | 5″ | 6″ | 8” | 12” | ||
Grade | Prime grade, Test grade, Dummy grade | ||||||||
Growth Method | CZ, FZ | ||||||||
Orientation | <100>,<111>,<110>, etc. | ||||||||
Type/Dopant | Intrinsic, P-type/Boron, N-type/Phos, N-type/As, N-type/Sb | ||||||||
Thickness (um) | 279 | 380 | 525 | 625 | 675 | 725 | 775 | ||
Thickness Tolerance | Standard ±25um, Maximum Capabilities ±5um | ± 20um | ± 20um | ||||||
Oxide Thickness (nm) | 20-2000 | ||||||||
Resistivity(Ohm-cm) | 0.001-30000 | ||||||||
Surface Finished | Polished/Etched, Polished/Polished | ||||||||
TTV (um) | Standard < 10um, Maximum Capabilities<5um | ||||||||
Bow/Warp (um) | Standard < 40um, Maximum Capabilities<20um | <40um | <40um | ||||||
Particle | Upon Request | ||||||||
Specifications of Silicon Ingots
Item | Specifications | |||||
Diameter | 2″ | 3″ | 4″ | 5″ | 6″ | 8″ |
Grade | Prime grade, Test grade, Dummy grade | |||||
Growth Method | CZ, FZ | |||||
Orientation | <100>,<111>,<110>, etc. | |||||
Type/Dopant | Intrinsic, P-type/Boron, N-type/Phos, N-type/As, N-type/Sb | |||||
Oxygen Content | 8-18 ppma | |||||
Carbon Content | >1 ppma | |||||
Resistivity(Ohm-cm) | 0.001-30000 ohm-cm | |||||
Life Time | >50us | |||||